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Me4946 smd

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Dual N-Channel GENERAL DESCRIPTIONThe ME4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.FEATURES● 60V/5.3A,RDS(ON)=41mΩ@VGS=10V● 60V/4.7A,RDS(ON)=52mΩ@VGS=4.5V● Super high density cell design for extremely low RDS(ON)● Exceptional on-resistance and maximum DC current capabilityAPPLICATIONS● Power Management in Note book● Portable Equipment● Battery Powered System● DC/DC Converter● Load Switch● DSC● LCD Display inverter